2SC3519B Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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производитель
2SC3519B
Nell Semiconductor Co., Ltd
2SC3519B Datasheet PDF : 3 Pages
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SEMICONDUCTOR
2SC3519B Series RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETER
CONDITIONS
min
V(BR)CEO Collector to emitter breakdown voltage
ICBO
IEBO
Collector cutoff current
Emitter cutoff current
2SC3519B 160
IC = 25mA, lB = 0
2SC3519B-A 180
VCB = 160V, lE = 0 2SC3519B
VCB = 180V, lE = 0 2SC3519B-A
VEB = 5V, IC = 0
hFE Forward current transfer ratio(DC Current gain) VCE = 4V, lC = 5A
50
VCE(sat) Collector to emitter saturation voltage
lC = 5A, lB = 0.5A
fT
Transition frequency
(Current gain - Bandwidth product)
VCE = 12V, lC = 2A, f= 1MHz
10
ton
Turn-on time
tstg
Storage time
tf
Fall time
lC = 10A, lB1 = 1.0A, lB2 = -1.0A
VCC = 40V, RL = 4Ω, VBB1 = 10V,
VBB2 = -5V
COB Output capacitance
VCB = 10V, lE = 0, ftest=1MHz
*Pulse test: Pulse width = 300µs, duty cycle ≤ 2.0%
typ max
100
100
100
2.0
50
0.20
1.30
0.45
250
UNIT
V
µA
V
MHz
µs
pF
Fig.1 lC-VCE Characteristics (Typical)
15
600m5A00m40A0mA
300mA
10
200mA
100mA
5
50mA
lB = 20mA
0
0
1
2
3
4
Collector-Emitter Voltage, VCE (V)
Fig.3 lC-VBE Temperature Characteristics (Typical)
15
VCE=4V
10
5
Fig.2 VCE(sat) - lB Characteristics (Typical)
3
2
1
IC=10A
5A
0
0
0.2
0.4
0.6
0.8
1.0
Base-Current, IB (V)
Fig.4 hFE-lC Characteristics (Typical)
300
VCE=4V
100
Typ
50
0
0
1
2
Base-Emittor Voltage, VBE(V)
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Page 2 of 3
10
0.02
0.1
0.5 1
5 10 15
Collector Current, lC (A)
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