2SC3519A Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Компоненты Описание

производитель

2SC3519A

Silicon NPN Power Transistors

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistors

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

V(BR)CEO= 160V(Min)-2SC3519

= 180V(Min)-2SC3519A

·Good Linearity of hFE

·Complement to Type 2SA1386/A

APPLICATIONS

·Designed for audio and general purpose applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

2SC3519

160

VCBO

Collector-Base

Voltage

V

2SC3519A

180

2SC3519

160

VCEO

Collector-Emitter

Voltage

V

2SC3519A

180

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

4

A

130

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SC3519/A

SPTECH website：www.superic-tech.com

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