STW8NA80 Просмотр технического описания (PDF) - New Jersey Semiconductor
Номер в каталоге
Компоненты Описание
производитель
STW8NA80 Datasheet PDF : 3 Pages
| |||
STW8NA80 STH8NA80FI
THERMAL DATA
Rthj-case
Rthj-amb
I, Rthc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-247
0.71
ISOWATT218
1.78
30
0.1
300
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T, max, 5 < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD= 50 V)
Max Value
7.2
700
Unit
A
mj
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
lD=250^iA VGS=0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGs = 0) VDS = Max Rating
TC=100°C
Gate-body Leakage
Current (Vos = 0)
VGS = ± 30 V
Min.
800
Typ.
Max.
50
500
100
Unit
V
HA
UA
nA
ON(*)
Symbol
VcS(Ih)
RDS(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 ^A
Static Drain-source On
Resistance
VGS = 10V
ID= 4A
iD(on)
On State Drain Current VDS > lD(on) * RDS(on)max
VGS = 10 V
Min.
2.25
Typ.
3
1.3
Max.
3.75
1.5
Unit
V
Q
7.2
A
DYNAMIC
Symbol
9fs (*)
ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > lD(on) X RDS(on)max ID = 4 A
VDS = 25 V f = 1 MHz VGS = 0
Min. Typ. Max. Unit
4.5 7.9
S
1750 2300 PF
188 245
pF
50
70
pF
Share Link: 