2N7002L Просмотр технического описания (PDF) - Unspecified
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2N7002L Datasheet PDF : 4 Pages
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2N7002L
Small signal MOSFET
60V, 115mA, N-Channel SOT-23
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(VGS=0, ID=10µAdc)
Zero Gate Voltage Drain Current
(VGS=0, VDS=60Vdc)
TJ=25℃
TJ=125℃
V(BR)DSS
IDSS
Gate-Body Leakage Current, Forward
(VGS=20Vdc)
IGSSF
Gate-Body Leakage Current, Forward
(VGS=-20Vdc)
IGSSR
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(VDS=VGS,ID=250µAdc)
VGS(th)
On-State Drain Current
(VDS≥2.0VDS(on), VGS=10Vdc)
ID(on)
Static Drain-Source On-State Voltage
(VDS=VGS,ID=500µAdc)
(VGS=VGS,ID=50µAdc)
VDS(on)
Static Drain-Source On-State Resistance
(VGS=10V, ID=500mAdc)
(VGS=5.0Vdc,ID=50mAdc)
Tc=25℃
Tc=125℃
Tc=25℃
Tc=125℃
rDS(on)
Forward Transconductance
gFS
(VDS≥2.0 VDS(on),ID=200mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
(VDS=25Vdc,VGS=0,f =1.0MHz)
Output Capacitance
(VDS=25Vdc, VGS=0,f=1.0MHz)
Coss
Reverse Transfer Capacitance
Crss
(VDS=25Vdc, VGS=0,f=1.0MHz)
SWITCHING CHARACTERISTICS (Note 5)
Turn-On Delay Time
Turn-Off Delay Time
(VDD=25Vdc,ID≈500mAdc,RG=25Ω, td(on)
RL=50Ω,Vgen=10V)
td(off)
BODY-DRAIN DIODE RATINGS
Diode Forward On-Voltage
VSD
(IS=11.5mAdc, VGS=0V)
Source Current Continuous
Is
(Body Diode)
Source Current Pulsed
ISM
5.Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%.
Min
Typ
Max
60
-
-
-
-
1.0
-
-
500
-
-
100
-
-
-100
Unit
Vdc
µAdc
nAdc
nAdc
1.0
-
500
-
-
-
-
-
-
-
-
-
-
-
-
-
80
-
2.5
-
3.75
0.375
7.5
13.5
7.5
13.5
-
Vdc
mA
Vdc
Ohms
mmhos
-
-
50
pF
-
-
25
pF
-
-
5.0
pF
-
-
20
ns
-
-
40
ns
-
-
-1.5
Vdc
-
-
-115
mAdc
-
-
-800
mAdc
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