STF6N60M2 Просмотр технического описания (PDF) - Unspecified

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Компоненты Описание

производитель

STF6N60M2

N-Channel 650V (D-S) Power MOSFET

Unspecified 

STF6N60M2

VDS

VGS

RG

RD

D.U.T.

10 V

Pulse width ≤ 1 μs

Duty factor ≤ 0.1 %

+- VDD

Fig. 12 - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 13 - Switching Time Waveforms

VDS

Vary tp to obtain

required IAS

RG

10 V

tp

L

D.U.T

IAS

0.01 Ω

+

- VDD

Fig. 14 - Unclamped Inductive Test Circuit

VDS

VDS

tp

VDD

IAS

Fig. 15 - Unclamped Inductive Waveforms

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10 V

QGS

VG

QG

QGD

Charge

Fig. 16 - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 μF

0.3 μF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 17 - Gate Charge Test Circuit

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