STF6N60M2 Просмотр технического описания (PDF) - Unspecified

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STF6N60M2

N-Channel 650V (D-S) Power MOSFET

Unspecified 

STF6N60M2

www.VBsemi.tw

100

TJ = 150 °C

10

TJ = 25 °C

1

VGS = 0 V

0.1

0.2 0.4 0.6 0.8 1

1.2 1.4 1.6

VSD, Source-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

1000

100

10

Operation in this Area

Limited by RDS(on)

IDM = Limited

1

Limited by RDS(on)*

100 μs

1 ms

0.1 TC = 25 °C

TJ = 150 °C

Single Pulse

BVDSS Limited

10 ms

0.01

1

10

100

1000

VDS- Drain -to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Fig. 8 - Maximum Safe Operating Area

20

15

10

5

0

25

50

75

100

125

150

TJ, Case Temperature (°C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

800

775

750

725

700

675

650

625

600

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 10 - Temperature vs. Drain-to-Source Voltage

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

0.02

Single Pulse

0.01

0.0001

0.001

0.01

0.1

1

Pulse Time (s)

Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case

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