2SB1155 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SB1155 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA; IB= 0
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= -7A; IB= -0.35A
VcE(sat)-2 Collector-Emitter Saturation Voltage
IC=-15A;IB=-1.5A
VeE(sat)-1 Base -Emitter Saturation Voltage
lc= -7A; IB= -0.35A
VeE(sat)-2 Base -Emitter Saturation Voltage
IC=-15A; le=-1.5A
ICBO
Collector Cutoff Current
VCB=-100V; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
lc=-0.1A;VcE=-2V
hFE-2
DC Current Gain
lc= -3A; VCE= -2V
hpE-3
DC Current Gain
fi
Current-Gain—Bandwidth Product
lc= -8A; VCE= -2V
IC=-0.5A;VCE=-10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= -7A, IB1= -IB2= -0.7A;
Vcc= -50V
hpE-2Classifications
Q
P
90-180 130-260
2SB1155
MIN TYP. MAX UNIT
-80
V
-0.5
V
-1.5
V
-1.5
V
-2.5
V
-10 jj A
-50 U A
45
90
260
30
25
MHz
0.5
us
1.3
Us
0.2
us
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