BYW29ED-200 Просмотр технического описания (PDF) - WeEn Semiconductors
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BYW29ED-200 Datasheet PDF : 11 Pages
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WeEn Semiconductors
BYW29ED-200
Ultrafast power diode
IF
IF
trr
Qr
time
0.25 x IR
103
trr
(ns)
102
10
003aac677
(2)
(1)
IR
IR
003aac563
Fig. 7. Reverse recovery definitions; step recovery
10
IRM
(A)
1
10-1
003aac676
(2)
(1)
1
1
10
102
dIF/dt (A/μs)
(1) IF = 1 A
(2) IF = 10 A
Fig. 8. Reverse recovery time as a function of rate of
change of forward current and initial forward current;
maximum values
102
003aac675
Qr
(nC)
(4)
(3)
(2)
(1)
10
10-2
1
10
102
dIF/dt (A/μs)
(1) IF = 1 A
(2) IF = 10 A
Fig. 9. Peak reverse recovery current as a function of
rate of change of forward current and initial forward
current; maximum values
1
1
(1) IF = 1 A
(2) IF = 2 A
(3) IF = 5 A
(4) IF = 10 A
10
102
dIF/dt (A/μs)
Fig. 10. Recovered charge as a function of rate of
change of forward current; maximum values
BYW29ED-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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