BFQ19 Просмотр технического описания (PDF) - NXP Semiconductors.
Номер в каталоге
Компоненты Описание
производитель
BFQ19 Datasheet PDF : 7 Pages
| |||
NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFQ19
120
handbook, halfpage
h FE
80
MBB774
40
0
0
40
80
120
I C (mA)
VCE = 10 V; Tj = 25 °C.
Fig.2 DC current gain as a function of collector
current.
handbook, h5alfpage
Cc
(pF)
4
MBB830
3
2
1
0
0
5
10
15
20
V CB (V)
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.3 Collector capacitance as a function of
collector-base voltage.
8
handbook, halfpage
fT
(GHz)
6
MBB773
4
2
0
0
40
80 I C (mA) 120
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
Rev. 03 - 28 September 2007
4 of 7
Share Link: 