BFQ19 Просмотр технического описания (PDF) - NXP Semiconductors.
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BFQ19 Datasheet PDF : 7 Pages
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NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFQ19
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 145 °C (note 1)
Note
1. Ts is the temperature at the soldering point of the collector tab.
THERMAL RESISTANCE
30 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Cc
Ce
Cre
fT
GUM
F
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise figure
IE = 0; VCB = 10 V
IC = 70 mA; VCE = 10 V
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 10 mA; VCE = 10 V; f = 1 MHz;
Tamb = 25 °C
IC = 70 mA; VCE = 10 V; f = 500 MHz
IC = 50 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
IC = 50 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 °C
IC = 50 mA; VCE = 10 V; Zs = opt.;
f = 500 MHz; Tamb = 25 °C
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ----1-----–------S----1---1----2S----2---1---1-2----–------S----2--2-----2---- dB.
MIN. TYP. MAX. UNIT
−
−
100 nA
25 80 −
−
1.6 −
pF
−
5
−
pF
−
1.3 −
pF
4.4 5.5 −
−
11.5 −
GHz
dB
−
7.5 −
dB
−
3.3 −
dB
Rev. 03 - 28 September 2007
3 of 7
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