BFQ70 Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

производитель

BFQ70

NPN Silicon RF Transistor

Infineon Technologies 

Common Emitter Power Gain

Power gain Gms, I S21e I 2 = f (IC)

VCE = 6 V, f = 200 MHz, Z0 = 50 Ω

BFQ 70

Power gain Gms, I S21e I 2 = f (IC)

VCE = 6 V, f = 500 MHz, Z0 = 50 Ω

Power gain Gms, I S21e I 2 = f (IC)

VCE = 6 V, f = 800 MHz, Z0 = 50 Ω

Power gain Gma, I S21e I 2 = f (IC)

VCE = 6 V, f = 1.5 GHz, Z0 = 50 Ω

Share Link: