SPU31N05 Просмотр технического описания (PDF) - Infineon Technologies

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SPU31N05

SIPMOS® PowerTransistor

Infineon Technologies 

SPD 31N05

SIPMOS® Power Transistor

Features

• N channel

• Enhancement mode

• Avalanche rated

Product Summary

Drain source voltage

Drain-Source on-state resistance

Continuous drain current

• dv/dt rated

• 175˚C operating temperature

VDS

55 V

RDS(on) 0.036 Ω

ID

31 A

Type

SPD31N05

SPU31N05

Package Ordering Code

P-TO252 Q67040-S4121

P-TO251-3-1 Q67040-S4113-A2

Packaging

Tape and Reel

Tube

Pin 1 Pin 2 Pin 3

G

D

S

Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TC = 25 ˚C

TC = 100 ˚C

Pulsed drain current

TC = 25 ˚C

Avalanche energy, single pulse

ID = 31 A, VDD = 25 V, RGS = 25 Ω

IDpulse

EAS

Avalanche energy, periodic limited by Tjmax

Reverse diode dv/dt

EAR

dv/dt

IS = 31 A, VDS = 40 V, di/dt = 200 A/µs,

Tjmax = 175 ˚C

Gate source voltage

Power dissipation

TC = 25 ˚C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

VGS

Ptot

Tj , Tstg

Value

31

22

124

140

7.5

6

±20

75

-55... +175

55/175/56

Unit

A

mJ

kV/µs

V

W

˚C

Data Sheet

1

06.99

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