SPU04N60S5 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

SPU04N60S5

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

SPU04N60S5

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA

600

V

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=0.2mA

3.5

5.5

V

RDS(on) Drain-Source On-Resistance

VGS= 10V; ID=2.8A

850

950

mΩ

IGSS

IDSS

VSDF

Gate-Source Leakage Current

Drain-Source Leakage Current

Diode forward voltage

VGS= ±20V;VDS= 0V

VDS= 600V; VGS= 0V;Tj=25℃

VDS= 600V; VGS= 0V;Tj=125℃

ISD=4.5A, VGS =0V

±0.1 μA

1

50

μA

1.2

V

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