IPG20N06S4L-26A Просмотр технического описания (PDF) - Infineon Technologies
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IPG20N06S4L-26A Datasheet PDF : 9 Pages
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13 Avalanche energy4)
E AS = f(T j), I D = 10A
40
IPG20N06S4L-26A
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D = 1 mA
65
32
63
24
61
16
59
8
57
0
25
50
75 100 125 150 175
Tj [°C]
55
-60 -20
20
60 100 140 180
Tj [°C]
15 Typ. gate charge4)
V GS = f(Q gate); I D = 20 A pulsed
parameter: V DD
16 Gate charge waveforms
12
V GS
Qg
10
12V
48 V
8
6
V g s(th)
4
2
Q g (th)
0
0
3
6
9
12
15
Qgate [nC]
Q gs
Rev. 1.0
page 7
Q sw
Q gd
Q gate
2013-02-28
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