IRLR024N Просмотр технического описания (PDF) - Inchange Semiconductor

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IRLR024N

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRLR024N, IIRLR024N

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID=250μA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=10A

IGSS

Gate-Source Leakage Current

VGS= ±16V

IDSS

Drain-Source Leakage Current

VDS=55V; VGS= 0V

VSD

Diode forward voltage

Is=11A, VGS = 0V

MIN TYP MAX UNIT

55

V

1

2

V

65

mΩ

±0.1 μA

25

μA

1.3

V

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