IRG4BC20S Просмотр технического описания (PDF) - International Rectifier
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производитель
IRG4BC20S Datasheet PDF : 8 Pages
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1000
800
600
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
400
200
0
1
C oes
C res
10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4BC20S
20
VCC = 400V
I C = 10A
16
12
8
4
0
0
5
10
15
20
25
30
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.20
VCC = 480V
VGE = 15V
TJ = 25 ° C
2.16 IC = 10A
2.12
2.08
2.04
2.00
0
10
20
30
40
50
RG , Gate Resistance (O( Ωhm))
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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10 RG = 50OΩhm
VGE = 15V
VCC = 480V
1
IC = 20 A
IC = 10 A
IC = 5.50AA
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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