STP30NF20 Просмотр технического описания (PDF) - Unspecified

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STP30NF20

N-Channel 200 V (D-S) MOSFET

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STP30NF20

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

2.8

100

VGS = 10 V

2.4

ID = 20 A

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2.0

TJ = 150 °C

TJ = 25 °C

1.6

10

1.2

0.8

0.4

- 50 - 25

0 25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

On-Resistance vs. Junction Temperature

100

10

IAV (A) at TA = 25 °C

1

IAV (A) at TA = 150 °C

0.1

0.00001 0.0001 0.001 0.01

0.1

1

tin (s)

Avalanche Current vs. Time

1

0

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

300

290

ID = 1.0 mA

280

270

260

250

240

230

- 50 - 25 0

25 50 75 100 125 150 175

TJ - Junction Temperature (°C)

Drain Source Breakdown vs. Junction Temperature

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