MRF150 Просмотр технического описания (PDF) - Tyco Electronics

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производитель

MRF150

RF Power Field-Effect Transistor

Tyco Electronics 

150 f = 175 MHz

90

136

30

Zin

15

30 90 f = 175 MHz

15

7.5

7.5

4.0 ZOL*

Zo = 10 Ω

2.0

4.0

VDD = 50 V

IDQ = 250 mA

Pout = 150 W PEP

ZOL* = Conjugate of the optimum load impedance

2.0

ZOL* = into which the device output operates at a

ZOL* = given output power, voltage and frequency.

NOTE: Gate Shunted by 25 Ohms.

Figure 7. Series Equivalent Impedance

BIAS

0 – 12 V

RF INPUT

R1

C1

C2

+

C4

C5

R3

L1

C3 R2

RFC2

+ 50 Vdc

C10

+ C11

L4

DUT

L3

C6

L2

C7

C9

RF OUTPUT

C8

C1, C2, C8 — Arco 463 or equivalent

C3 — 25 pF, Unelco

C4 — 0.1 µF, Ceramic

C5 — 1.0 µF, 15 WV Tantalum

C6 — 25 pF, Unelco J101

C7 — 25 pF, Unelco J101

C9 — Arco 262 or equivalent

C10 — 0.05 µF, Ceramic

C11 — 15 µF, 60 WV Electrolytic

L1 — 3/4″, 18 AWG into Hairpin

L2 — Printed Line, 0.200″ x 0.500″

L3 — 1″, #16 AWG into Hairpin

L4 — 2 Turns #16 AWG, 5/16 ID

RFC1 — 5.6 µH, Choke

RFC2 — VK200–4B

R1 — 150 Ω, 1.0 W Carbon

R2 — 10 kΩ, 1/2 W Carbon

R3 — 120 Ω, 1/2 W Carbon

Figure 8. 150 MHz Test Circuit (Class AB)

REV 9

4

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