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MA4PBL

PIN Diodes for Microwave Switch Designs

M/A-COM Technology Solutions, Inc. 

AN3021

PIN Diodes for Microwave Switch Designs

Schematic 6: TR Switch Schematic with 25 dB Isolation Design with +3 V Supply

Ant

Rev. V2

θ = 90 ° @ Fo

L

Tx

Rx

C

C

B1 Bias

Schematic 6: TR Switch D.C. Bias to RF Truth Table

RF State

Low Loss Tx - Ant & Isolation Rx - Tx

Low Loss Ant - Rx & Isolation Tx - Rx

B1 Bias

+2 V @ +10 mA

0 V @ 0 mA

For Lumped Electrical Transmission Line Length, θ, between Junction and Rx Shunt Diode :

L = Zo/ (2π Fo) , C = 1/ (2π Fo Zo) , Where Fo is the Resonant Frequency = ( F1 * F2 ) ½ & F1 & F2 are Band Edge Frequencies.

10

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

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