5962-9458501H4A Просмотр технического описания (PDF) - Micross Components
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5962-9458501H4A Datasheet PDF : 15 Pages
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EEPROM
AS8E128K32
DEVICE IDENTIFICATION
An extra 128 bytes of EEPROM memory is available on each
die for user identification. By raising A9 to 12V + 0.5V and using
address locations 1FF80H to 1FFFFH the bytes may be written to
or read from in the same manner as the regular memory array.
DEVICE OPERATION
The 128K x 32 EEPROM memory solution is an electrically
erasable and programmable memory module that is accessed like a
Static RAM for the read or write cycle without the need for external
components. The device contains a 128-byte-page register to allow
writing of up to 128 bytes of data simultaneously. During a write cycle,
the address and 1 to 128 bytes of data are internally latched, freeing
the address and data bus for other operations. Following the initia-
tion of a write cycle, the device will automatically write the latched
data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has
been detected a new access for a read or write can begin.
of the last byte written will result in the complement of the written data
to be presented on I/O7. Once the write cycle has been completed,
true data is valid on all outputs, and the next write cycle may begin.
DATA Polling may begin at anytime during the write cycle.
TOGGLE BIT
In addition to DATA Polling the module provides another method
for determining the end of a write cycle. During the write operation,
successive attempts to read data from the device will result in I/O6
of the accessed die toggling between one and zero. Once the write
has completed, I/O6 will stop toggling and valid data will be read.
Reading the toggle bit may begin at any time during the write cycle.
DATA PROTECTION
If precautions are not taken, inadvertent writes may occur during
transitions of the host power supply. The E2 module has incorporated
both hardware and software features that will protect the memory
against inadvertent writes.
READ
The memory module is accessed like a Static RAM. When CE\
and OE\ are low and WE\ is High, the data stored at the memory loca-
tion determined by the address pins is asserted on the outputs. The
module can be read as a 32 bit, 16 bit or 8 bit device. The outputs are
put in the high impedance state when either CE\ or OE\ is high. This
dual-line control gives designers flexibility in preventing bus conten-
tion in their system.
BYTE WRITE
A low pulse on the WE\ or CE\ input with CE\ or WE\ low (re-
spectively) and OE\ high initiates a write cycle. The address is latched
on the falling edge of CE\ or WE\, whichever occurs last. The data is
latched by the first rising edge of CE\ or WE\. Once a BWDW (byte,
word or double word) write has been started it will automatically time
itself to completion.
PAGE WRITE
The page write operation of the 128K x 32 EEPROM allows 1
to 128 BWDWs of data to be written into the device during a single
internal programming period. Each new BWDW must be written
within 150-μ sec (tBLC) of the previous BWDW. If the tBLC limit is
exceeded the memory module will cease accepting data and commence
the internal programming operation. For each WE high to low transi-
tion during the page write operation, A7-A16 must be the same.
The A0-A6 inputs are used to specify which bytes within the page
are to be written. The bytes may be loaded in any order and may be
altered within the same load period. Only bytes which are specified
for writing will be written; unnecessary cycling of other bytes within
the page does not occur.
DATA POLLING
This memory module features DATA Polling to indicate the end
of a write cycle. During a byte or page write cycle an attempted read
HARDWARE PROTECTION
Hardware features protect against inadvertent writes to the module
in the following ways: (a) Vcc sense - if Vcc is below 3.8 V (typical)
the write function is inhibited; (b) Vcc power-on delay - once Vcc has
reached 3.8 V the device will automatically time out 5 ms (typical)
before allowing a write; (c) write inhibit - holding any one of OE\ low,
CE\ high or WE\ high inhibits write cycles; (d) noise filter - pulses of
less than 15 ns (typical) on the WE\ or CE\ inputs will not initiate a
write cycle.
SOFTWARE DATA PROTECTION
A software controlled data protection feature has been imple-
mented on the memory module. When enabled, the software data
protection (SDP), will prevent inadvertent writes. The SDP feature
may be enabled or disabled by the user and is shipped with SDP dis-
abled, SDP is enabled by the host system issuing a series of three write
commands; three specific bytes of data are written to three specific
addresses (refer to Software Data Protection Algorithm). After writing
the three byte command sequence and after tWC the entire module will
be protected from inadvertent write operations. It should be noted,
that once protected the host may still perform a byte of page write to
the module. This is done by preceding the data to be written by the
same three byte command sequence used to enable SDP. Once set,
SDP will remain active unless the disable command sequence is issued.
Power transitions do not disable SDP and SDP will protect the 128K x
32 EEPROM during power-up and Power-down conditions. All com-
mand sequences must conform to the page write timing specifications.
The data in the enable and disable command sequences is not written
to the device and the memory addresses used in the sequence may be
written with data in either a byte or page write operation.
After setting SDP, any attempt to write to the device without the
three byte command sequence will start the internal write timers. No
data will be written to the device; however, for the duration of tWC,
read operations will effectively be polling operations.
AS8E128K32
Rev. 8.2 07/10
Micross Components reserves the right to change products or specifications without notice.
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