BTS140A Просмотр технического описания (PDF) - New Jersey Semiconductor
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BTS140A Datasheet PDF : 3 Pages
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Electrical Characteristics
at 7] = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ.
max.
Static Characteristics
Drain-source breakdown voltage
VGS = 0, 7D = 0.25 mA
Gate threshold voltage
VQS = VDS, ID = 1 mA
Zero gate voltage drain current
VGS = 0 V, VDS = 50 V
7] = 25 °C
7] = 125°C
Gate-source leakage current
VGS = ±20V,VDS = 0
7] = 25 °C
7] = 150°C
Drain-source on-state resistance
VGS = 10V, /D=32A
V(BR)DSS
50
VoS(th)
2.5
7oss
-
-
IQSS
-
-
^DS(on)
—
Dynamic Characteristics
Forward transconductance
VDS > 2 x 7D x RDS(on}max, 70 = 32 A
£ts
12
Input capacitance
VGS = 0, VDS = 25V,/=1MHz
C|8S
_
Output capacitance
VGS = 0, VDS = 25V,/=1MHz
^OM
_
Reverse transfer capacitance
c^
VQS = 0, VDS = 25V,/=1MHz
_
Turn-on time t^, (ton = ta(on) + tr)
_
^d(on)
Vcc = 25 V, VQS = 10 V, 7D = 3 A, RGS = 50 Q
t<
-
Turn-off time t«, (t* = rd(oH) + /,)
fd(otf)
-
Vcc = 25 V, VQS = 10 V, 7D = 3 A, RQS = 50 ft
—
'(
V
—
—
3.0
3.5
HA
0.1
1.0
10
100
10
100
nA
2.0
4.0
HA
Q
0.024 0.028
S
26
_
PF
1800
2400
800
1200
280
450
35
50
ns
85
130
220
280
140
180
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