Nexperia
PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220
12
RDSon
(mΩ)
10
003aad441
VGS (V) = 5
8
5.5
6
8
6
20
10
4
0
20
40
60
80
100
ID (A)
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
VGS
(V)
8
16 V
003aad444
104
C
(pF)
003aad445
Ciss
6
VDS = 40 V
4
64 V
2
0
0
20
40
60
80
QG (nC)
103
102
10-1
1
Coss
Crss
10
102
VDS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN6R5-80PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 November 2010
© Nexperia B.V. 2017. All rights reserved
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