PSMN6R5-80PS Просмотр технического описания (PDF) - Nexperia B.V. All rights reserved
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PSMN6R5-80PS Datasheet PDF : 15 Pages
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Nexperia
PSMN6R5-80PS
N-channel 80 V 6.9 mΩ standard level MOSFET in TO220
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
Tj ≥ 25 °C; Tj ≤ 175 °C
-
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
-20
VGS = 10 V; Tmb = 100 °C; see Figure 1
-
VGS = 10 V; Tmb = 25 °C; see Figure 1
[1] -
pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 -
Tmb = 25 °C; see Figure 2
-
-55
-55
IS
source current
Tmb = 25 °C
-
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
VGS = 10 V; Tj(init) = 25 °C; ID = 49 A;
-
avalanche energy
Vsup ≤ 80 V; RGS = 50 Ω; unclamped
[1] Continuous current rating is limited by package.
Max Unit
80 V
80 V
20 V
82 A
100 A
470 A
210 W
175 °C
175 °C
100 A
470 A
700 mJ
150
ID
(A)
100
(1)
003aad362
120
Pder
(%)
80
03aa16
50
40
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN6R5-80PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 November 2010
© Nexperia B.V. 2017. All rights reserved
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