DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
TA = –25˚C
20
ID = 10 mA
1 mA
10
µ PA675T
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
TA = 25˚C
20
ID = 10 mA
1 mA
10
0
1234567
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
TA = 75˚C
20
ID = 10 mA
1 mA
10
0
1234567
VGS - Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
50
VGS = 0 V
f = 1 MHz
20
10
Ciss
Coss
5
2
1
Crss
0.5
12
5 10 20
50
VDS - Drain to Source Voltage - V
0
1234567
VGS - Gate to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD
VOLTAGE
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
500
VDD = 3 V
VGS = 3 V
tr
200
100
50
tf
td(on)
20
td(off)
10
20
50 100 200
500
ID - Drain Current - mA
4
Data Sheet G15454EJ1V0DS