UPA1870B Просмотр технического описания (PDF) - NEC => Renesas Technology
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UPA1870B Datasheet PDF : 7 Pages
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µ PA1870B
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS
VDS = 20.0 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±12.0 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10.0 V, ID = 1.0 mA
VDS = 10.0 V, ID = 3.0 A
VGS = 4.5 V, ID = 3.0 A
RDS(on)2 VGS = 4.0 V, ID = 3.0 A
RDS(on)3 VGS = 2.5 V, ID = 3.0 A
Input Capacitance
Ciss
VDS = 10.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on)
VDD = 10.0 V, ID = 3.0 A
Rise Time
tr
VGS = 4.0 V
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG
VDD = 16.0 V
Gate to Source Charge
QGS ID = 6.0 A
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
VGS = 4.0 V
IF = 6.0 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IF = 6.0 A, VGS = 0 V
Qrr
di/dt = 50 A/µs
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
TEST CIRCUIT 1 SWITCHING TIME
MIN.
0.5
5
12.0
13.0
15.0
TYP.
1.0
16.0
16.5
20.0
720
166
125
48
245
315
305
8.0
1.7
3.5
0.8
295
450
MAX.
1.0
±10.0
1.5
20.0
21.0
27.0
UNIT
µA
µA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton
toff
D.U.T.
IG = 2 mA
RL
PG.
50 Ω
VDD
2
Data Sheet G16741EJ1V0DS
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