M28F101-120XP1TR Просмотр технического описания (PDF) - STMicroelectronics
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M28F101-120XP1TR Datasheet PDF : 23 Pages
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M28F101
Table 8. DC Characteristics
(TA = 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; VCC = 5V ± 10%)
Symbol
Parameter
Test Condition
ILI
Input Leakage Current
ILO
Output Leakage Current
0V ≤ VIN ≤ VCC
0V ≤ VOUT ≤ VCC
ICC
ICC1
ICC2 (1)
ICC3 (1)
ICC4 (1)
ICC5 (1)
ILPP
IPP
IPP1(1)
Supply Current (Read)
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Supply Current (Programming)
Supply Current (Program Verify)
Supply Current (Erase)
Supply Current (Erase Verify)
Program Leakage Current
Program Current (Read or
Standby)
Program Current (Programming)
E = VIL, f = 6MHz
E = VIH
E = VCC ± 0.2V
During Programming
During Verify
During Erasure
During Erase Verify
VPP ≤ VCC
VPP > VCC
VPP ≤ VCC
VPP = VPPH, During Programming
IPP2(1)
IPP3(1)
IPP4(1)
VIL
VIH
Program Current (Program
Verify)
Program Current (Erase)
Program Current (Erase Verify)
Input Low Voltage
Input High Voltage TTL
Input High Voltage CMOS
VPP = VPPH, During Verify
VPP = VPPH, During Erase
VPP = VPPH, During Erase Verify
VOL
Output Low Voltage
VOH
VPPL
Output High Voltage CMOS
Output High Voltage TTL
Program Voltage (Read
Operations)
IOL = 5.8mA (grade 1)
IOL = 2.1mA (grade 6)
IOH = –100µA
IOH = –2.5mA
IOH = –2.5mA
VPPH
Program Voltage (Read/Write
Operations)
VID
IID (1)
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
A9 = VID
VLKO
Supply Voltage, Erase/Program
Lock-out
Note: 1. Not 100% tested. Characterisation Data available.
Min
Max
Unit
±1
µA
±10
µA
30
mA
1
mA
50
µA
10
mA
15
mA
15
mA
15
mA
±10
µA
120
µA
±10
µA
30
mA
5
mA
30
mA
5
mA
–0.5
0.8
V
2
VCC + 0.5 V
0.7 VCC VCC + 0.5 V
0.45
V
0.45
V
4.1
V
0.85 VCC
V
2.4
V
0
6.5
V
11.4
12.6
V
11.5
13
V
200
µA
2.5
V
6/23
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