M28F101-120XP1TR Просмотр технического описания (PDF) - STMicroelectronics
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M28F101-120XP1TR Datasheet PDF : 23 Pages
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M28F101
1 Mb (128K x 8, Chip Erase) FLASH MEMORY
5V ±10% SUPPLY VOLTAGE
12V PROGRAMMING VOLTAGE
FAST ACCESS TIME: 70ns
BYTE PROGRAMING TIME: 10µs typical
ELECTRICAL CHIP ERASE in 1s RANGE
LOW POWER CONSUMPTION
– Stand-by Current: 100µA max
10,000 ERASE/PROGRAM CYCLES
INTEGRATED ERASE/PROGRAM-STOP
TIMER
OTP COMPATIBLE PACKAGES and PINOUTS
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 07h
DESCRIPTION
The M28F101 FLASH Memory is a non-volatile
memory which may be erased electrically at the
chip level and programmed byte-by-byte. It is or-
ganised as 128K bytes of 8 bits. It uses a command
register architecture to select the operating modes
and thus provides a simple microprocessor inter-
face. The M28F101 FLASH Memory is suitable for
applications where the memory has to be repro-
grammed in the equipment. The access time of
70ns makes the device suitable for use in high
speed microprocessor systems.
32
1
PDIP32 (P)
PLCC32 (K)
TSOP32 (N)
8 x 20 mm
Figure 1. Logic Diagram
VCC VPP
17
A0-A16
8
DQ0-DQ7
Table 1. Signal Names
A0-A16
Address Inputs
DQ0-DQ7
Data Inputs / Outputs
E
Chip Enable
G
Output Enable
W
Write Enable
VPP
Program Supply
VCC
Supply Voltage
VSS
Ground
W
M28F101
E
G
VSS
AI00666B
April 1997
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