M28F101-120XP1TR Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

M28F101-120XP1TR

1 Mb (128K x 8, Chip Erase) FLASH MEMORY

STMicroelectronics 

M28F101

Figure 7. Electronic Signature Command Waveforms

VPP

A0-A16

tVPHEL

E

tELWL

G

tGHWL

W

tWLWH

tDVWH

tWHEH

tWHDX

DQ0-DQ7

COMMAND

READ ELECTRONIC

SIGNATURE SET-UP

tAVQV

00000h-00001h

tELQV

tWHGL

tGLQV

tAXQX

tEHQZ

tGHQZ

DATA OUT

READ

MANUFACTURER

OR DEVICE

AI00673

READ/WRITE MODES (cont’d)

As the Erase algorithm flow chart shows, when the

data read during Erase Verify is not FFh, another

Erase operation is performed and verification con-

tinues from the address of the last verifiedbyte. The

command is terminated by writing another valid

command to the command register (for example

Program or Reset).

Program and Program Verify Modes. The Pro-

gram Mode is set-up by writing 40h to the command

register. This is followed by a second write cycle

which latches the address and data of the byte to

be programmed. The rising edge of W during this

secind cycle starts the programming operation.

Programming is followed by a Program Verify of the

data written.

ProgramVerify Mode is set-up by writing C0h to the

command register. The rising edge of W during the

set-up of the Program Verify Mode stops the Pro-

gramming operation. The following read cycle, of

the address already latched during programming,

is made with an internally generated margin volt-

age applied,reading valid data indicates that all bits

have been programmed.

Reset Mode. This command is used to safely abort

Erase or Program Modes. The Reset Mode is

set-up and performed by writing FFh two times to

the command register. The command should be

followed by writing a valid command to the the

command register (for example Read).

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