IRF737LCPBF Просмотр технического описания (PDF) - Vishay Semiconductors
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IRF737LCPBF Datasheet PDF : 8 Pages
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IRF737LC, SiHF737LC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
0.50
-
MAX.
62
-
1.7
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 300 V, VGS = 0 V
VDS = 240 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 3.7 Ab
VDS = 50 V, ID = 3.7 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Drain-Source Body Diode Characteristics
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 6.1 A, VDS = 240 V,
see fig. 6 and 13b
VDD = 150 V, ID = 6.1 A,
RG = 12 Ω, RD = 24 Ω, see fig. 10b
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
TJ = 25 °C, IS = 6.1 A, VGS = 0 Vb
trr
TJ = 25 °C, IF = 6.1 A, dI/dt = 100 A/µsb
Qrr
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
MIN.
300
-
2.0
-
-
-
-
2.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
0.391
-
-
-
-
-
-
-
-
4.0
± 100
25
250
0.75
-
V
V/°C
V
nA
µA
Ω
S
430
-
120
-
pF
9.2
-
-
17
-
4.8
nC
-
7.6
6.6
-
21
-
ns
13
-
12
-
4.5
-
nH
7.5
-
-
6.1
A
-
24
-
1.6
V
320
490
ns
1.5
2.2
µC
www.vishay.com
2
Document Number: 91050
S-82998-Rev. A, 12-Jan-09
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