IRF7493TRPBF-1 Просмотр технического описания (PDF) - International Rectifier
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IRF7493TRPBF-1 Datasheet PDF : 9 Pages
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IRF7493PbF-1
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds
Crss = C gd
Coss = C ds + Cgd
SHORTED
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= 5.6A
16
12
VDS= 64V
VDS= 40V
VDS= 16V
8
4
0
0 10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
TJ = 150°C
10.0
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1.0
0.1
0.2
TJ = 25°C
VGS = 0V
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
10
100μsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10msec
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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June 23, 2014
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