IRF7493TRPBF-1 Просмотр технического описания (PDF) - International Rectifier

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производитель

IRF7493TRPBF-1

HEXFET® Power MOSFET

International Rectifier 

VDS

RDS(on) max

(@VGS = 10V)

Qg (typical)

ID

(@TA = 25°C)

80

V

15 mΩ

35

nC

9.3

A

IRF7493PbF-1

HEXFET® Power MOSFET

S

1

S

2

S

3

G

4

AA

8

D

7

D

6

D

5

D

Top View

SO-8

Features

Industry-standard pinout SO-8 Package

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial qualification

Benefits

⇒ Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Base Part Number Package Type

IRF7493PbF-1

SO-8

Standard Pack

Form

Quantity

Tube/Bulk

95

Tape and Reel

4000

Orderable Part Number

IRF7493PbF-1

IRF7493TRPbF-1

Absolute Maximum Ratings

Parameter

VDS

VGS

ID @ TA = 25°C

ID @ TA = 70°C

IDM

PD @TA = 25°C

PD @TA = 70°C

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

c Pulsed Drain Current

f Power Dissipation

f Power Dissipation

Linear Derating Factor

TJ

Operating Junction and

TSTG

Storage Temperature Range

Thermal Resistance

RθJL

Junction-to-Lead

RθJA

f Junction-to-Ambient

Parameter

Max.

80

± 20

9.3

7.4

74

2.5

1.6

0.02

-55 to +150

Units

V

A

W

W /°C

°C

Typ.

–––

–––

Max.

20

50

Units

°C/W

Notes  through … are on page 9

1

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June 23, 2014

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