IRF7478QPBF(2007) Просмотр технического описания (PDF) - International Rectifier

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Компоненты Описание

производитель

IRF7478QPBF
(Rev.:2007)

SMPS MOSFET

International Rectifier 

IRF7478QPbF

8.0

RD

VDS

6.0

VGS

RG

D.U.T.

+-VDD

10V

4.0

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

2.0

0.0

25

50

75

100

125

150

TC , Case Temperature ( °C)

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

Fig 10a. Switching Time Test Circuit

VDS

90%

10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

100

D = 0.50

10

0.20

0.10

0.05

1

0.02

0.01

PDM

SINGLE PULSE

0.1

(THERMAL RESPONSE)

t1

t2

Notes:

1. Duty factor D = t1 / t 2

0.01

0.00001

0.0001

0.001

0.01

2. Peak T J = P DM x Z thJA + TA

0.1

1

10

100

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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