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30TPS08PBF Просмотр технического описания (PDF) - Vishay Semiconductors

Номер в каталоге
Компоненты Описание
производитель
30TPS08PBF
Vishay
Vishay Semiconductors Vishay
30TPS08PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
30TPS...PbF High Voltage Series
Phase Control SCR, 20 A Vishay High Power Products
1000
100
TJ= 25°C
TJ= 125°C
10
30TPS.. Series
1
01234567
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1 D = 0.08
Steady State Value
(DC Operation)
Single Pulse
30TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
100
Rec tangular gate p ulse
a )Rec ommend ed loa d line for
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommend ed load line for
<= 30%rated di/ dt: 10 V, 65 ohms
10 tr = 1 µs, tp >= 6 µs
(a )
(b )
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
1
VGD
IGD
0.1
0.001
0.01
(4) (3) (2) (1)
30TPS.. Series
Frequency Limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Document Number: 94386
Revision: 06-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5

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