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30TPS08PBF Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание
производитель
30TPS08PBF
Vishay
Vishay Semiconductors Vishay
30TPS08PBF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
30TPS...PbF High Voltage Series
Vishay High Power Products Phase Control SCR, 20 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum RMS on-state current
IT(AV)
IRMS
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Maximum holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
I2t
I2t
VTM
rt
VT(TO)
IRM/IDM
IH
IL
dV/dt
dI/dt
TEST CONDITIONS
TC = 95 °C, 180° conduction half sine wave
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
20 A, TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A
Anode supply = 6 V, resistive load
VALUES
20
30
250
300
310
442
4420
1.3
12
1.0
0.5
10
100
200
500
150
UNITS
A
A2s
A2s
V
mΩ
V
mA
V/µs
A/µs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
PGM
PG(AV)
+ IGM
- VGM
Maximum required DC gate current to trigger
IGT
Maximum required DC gate
voltage to trigger
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
TJ = 125 °C, VDRM = Rated value
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
UNITS
W
A
V
mA
V
mA
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
tgt
trr
tq
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
VALUES
0.9
4
110
UNITS
µs
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94386
Revision: 06-Jun-08

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