KTC5103D(2013) Просмотр технического описания (PDF) - KEC
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производитель
KTC5103D Datasheet PDF : 3 Pages
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SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
·High Power Dissipation : PC=1.3W(Ta=25℃)
·Complementary to KTA1385D
KTC5103D
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse *
VCBO
VCEO
VEBO
IC
ICP
Base Current
IB
Collector Power
Ta=25℃
PC
Dissipation
Tc=25℃
Junction Temperature
Tj
Storage Temperature Range
Tstg
* PW≤10ms, Duty Cycle≤50%
RATING
60
60
7
5
8
1
1.0
15
150
-55～150
UNIT
V
V
V
A
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
ICBO
IEBO
hFE(1)
hFE(2) (Note)
hFE(3)
VCE(sat)
VBE(sat)
VCB=50V, IE=0
VEB=7V, IC=0
VCE=1V, IC=0.1A
VCE=1V, IC=2A
VCE=2V, IC=5A
IC=2A, IB=0.2A
IC=2A, IB=0.2A
Turn On Time
ton
Switching
Storage Time
tstg
Time
Fall Time
tf
* Pulse test : PW≤50μS, Duty Cycle≤2% Pulse
Note) hFE(2) Classification : O:160～320, Y:200～400.
2013. 6. 26
Revision No : 4
MIN.
-
-
60
160
50
-
-
-
TYP.
-
-
-
-
-
0.1
0.9
0.2
MAX.
10
10
-
400
-
0.3
1.2
UNIT
μA
μA
V
V
1
-
1.1
2.5
μS
-
0.2
1
1/3
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