IRFR24N15D Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

IRFR24N15D

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor IRFR24N15D, IIRFR24N15D

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID=250μA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=14A

IGSS

Gate-Source Leakage Current

VGS= ±30V

IDSS

Drain-Source Leakage Current

VDS=150V; VGS= 0V

VSD

Diode forward voltage

Is=14A, VGS = 0V

MIN TYP MAX UNIT

150

V

3

5

V

95

mΩ

±0.1 μA

25

μA

1.5

V

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

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