23C256 Просмотр технического описания (PDF) - NEC => Renesas Technology
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23C256 Datasheet PDF : 32 Pages
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µPD23C256112A
AC Characteristics (TA = 0 to 70°C, VCC = 3.3 ± 0.3 V)
Parameter
Symbol MIN TYP. MAX. Unit
CLE setup time
CLE hold time
/CE setup time
/CE hold time
Write pulse width
ALE setup time
ALE hold time
Data setup time
Data hold time
Write cycle time
/WE high hold time
Ready to /RE falling edge
Read pulse width
Read cycle time
/RE access time (serial data access)
/CE high hold time for last address in serial read cycle
/RE access time (ID read )
/RE high to output High-Z
/CE high to output High-Z
/RE high hold time
Output High-Z to /RE falling edge
/RE access time (status read)
/CE access time (status read)
/WE high to /CE low
/WE high to /RE low
ALE low to /RE low (ID read)
/CE low to /RE low (ID read)
Memory cell array to starting address
/WE high to Busy
ALE low to /RE low (read cycle)
/RE last clock rising edge to Busy (in sequential read)
/CE high to Ready (when interrupted by /CE in read mode)
Device reset time
tCLS
tCLH
tCS
tCH
tWP
tALS
tALH
tDS
tDH
tWC
tWH
tRR
tRP
tRC
tREA
tCEH
tREAID
tRHZ
tCHZ
tREH
tIR
tRSTO
tCSTO
tWHC
tWHR
tAR1
tCR
tR
tWB
tAR2
tRB
tCRYNote
tRST
0
10
0
10
25
0
10
20
10
50
15
20
35
50
100
10
15
0
30
30
100
100
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
35
ns
ns
35
ns
30
ns
20
ns
ns
ns
35
ns
45
ns
ns
ns
ns
ns
7
µs
200
ns
ns
200
ns
1
µs
6
µs
Note tCRY (time from /CE high to Ready) depends on the pull-up resister of the R, /B output pin.
Data Sheet M15902EJ2V0DS
11
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