MMBT6520 Просмотр технического описания (PDF) - KEXIN Industrial

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Компоненты Описание

производитель

MMBT6520

PNP Transistors

KEXIN Industrial 

SMD Type

Transistors

PNP Transistors

MMBT6520 (KMBT6520)

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base-Emitter On Voltage

DC current gain

Emitter-base capacitance

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= -100 μA， IE=0

VCEO Ic= -1 mA， IB=0

VEBO IE= -100μA， IC=0

ICBO VCB= -250 V , IE=0

IEBO VEB= -4V , IC=0

IC=-10 mA, IB=-1mA

IC=-20 mA, IB=-2mA

VCE(sat)

IC=-30 mA, IB=-3mA

IC=-50 mA, IB=-5mA

IC=-10 mA, IB=-1mA

VBE(sat) IC=-20 mA, IB=-2mA

IC=-30 mA, IB=-3mA

VBE(on) VCE= -10V, IC= -100mA

VCE= -10V, IC= -1mA

VCE=- 10V, IC= -10mA

hFE VCE=- 10V, IC= -30mA

VCE=- 10V, IC= -50mA

VCE=- 10V, IC= -100mA

Ceb VEB= -0.5V, IC= 0,f=1MHz

Cob VCB= -20V, IE= 0,f=1MHz

fT

VCE= -20V, IC= -10mA,f=20MHz

Min Typ Max Unit

-350

-350

V

-5

-50

nA

-50

-0.3

-0.35

-0.5

-1

V

-0.75

-0.85

-0.9

-2

20

30

30

200

20

200

15

100

pF

6

40

200 MHz

■ Marking

Marking

2Z

2 www.kexin.com.cn

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