ZXMP10A17E6(2009) Просмотр технического описания (PDF) - Diodes Incorporated.

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Компоненты Описание

производитель

ZXMP10A17E6
(Rev.:2009)

100V P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

Typical Characteristics - continued

A Product Line of

Diodes Incorporated

ZXMP10A17E6

600

500

C

400

ISS

V = 0V

GS

f = 1MHz

300

C

OSS

200

100

C

RSS

0

0.1

1

10

100

-V - Drain - Source Voltage (V)

DS

Capacitance v Drain-Source Voltage

10

8

6

4

2

V = -50V

DS

I = -1.4A

D

0

0

2

4

6

8

10

Q - Charge (nC)

Gate-Source Voltage v Gate Charge

Test Circuits

QG

VG

QGS

QGD

Charge

Basic gate charge waveform

VDS

90%

tr

td(of )

t(on)

tr

td(on)

t(on)

10%

VGS

Switching time waveforms

Current

regulator

12V 0.2␮F 50k

Same as

D.U.T

VDS

IG

D.U.T

ID

VGS

Gate charge test circuit

VGS

RG

Pulse width Ͻ 1␮S

Duty factor 0.1%

RD

VDS

VDD

Switching time test circuit

ZXMP10A17E6

Document Number DS32027 Rev. 3 - 2

6 of 8

www.diodes.com

December 2009

© Diodes Incorporated

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