ZXM61P02F Просмотр технического описания (PDF) - ZP Semiconductor
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ZXM61P02F Datasheet PDF : 3 Pages
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ZXM61P02F
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS = 4.5V
Pulsed Drain Current (Note 6)
TA = 25°C (Note 5)
TA = 70°C (Note 5)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 6)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
Value
-20
±12
-0.9
-0.7
-4.9
-0.9
-4.9
Units
V
V
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Linear Derating Factor
Power Dissipation (Note 5)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
Value
625
5
806
6.4
200
155
-55 to +150
Notes:
4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
5. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature.
Unit
mW
mW/°C
mW
mW/°C
°C/W
°C/W
°C
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