IXGN200N60A2 Просмотр технического описания (PDF) - IXYS CORPORATION

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Компоненты Описание

производитель

IXGN200N60A2

IGBT Optimized for Switching up to 5 kHz

IXYS CORPORATION 

IXGN 200N60A2

Symbol

gfs

Cies

Coes

Cres

Qg

Qge

Qgc

td(on)

tri

td(off)

tfi

Eoff

td(on)

tri

Eon

td(off)

tfi

Eoff

RthJC

RthCK

Test Conditions

Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

IC = 60 A; VCE = 10 V,

70 106

S

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

VCE = 25 V, VGE = 0 V, f = 1 MHz

9900

pF

740

pF

190

pF

IC = IC110, VGE = 15 V, VCE = 0.5 VCES

480

nC

63

nC

169

nC

Inductive load, TJ = 25°C

IC = IC110, VGE = 15 V

VCE = 0.8 VCES, RG = Roff = 2.0 Ω

60

ns

45

ns

360

ns

250

ns

5

mJ

Inductive load, TJ = 125°C

IC = IC110, VGE = 15 V

VCE = 0.8 VCES, RG = Roff = 2.4 Ω

60

ns

60

ns

3.0

mJ

290

ns

660

ns

12

mJ

0.17 K/W

0.05

K/W

SOT-227B miniBLOC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

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