IRF620A Просмотр технического описания (PDF) - Inchange Semiconductor
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IRF620A Datasheet PDF : 3 Pages
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INCHANGE Semiconductor
isc
IRF620A
N-Channel
isc Product Specification
MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VDS= VGS; ID= 0.25mA
VGS= 10V; ID=2.5A
VGS= ±30V;VDS= 0
VDS= 200V; VGS= 0
VDS= 160V; VGS= 0; Tj= 125℃
IS= 5A; VGS= 0
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
MIN MAX UNIT
200
V
2
4
V
0.8
Ω
±100
nA
10
100
μA
1.5
V
360
pF
65
pF
30
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
Td(on) Turn-on Delay Time
Tr
Rise Time
Td(off) Turn-off Delay Time
VDD=100V,ID=5A
RG=18Ω
Tf
·
Fall Time
MIN
TYP MAX UNIT
30
ns
30
ns
60
ns
40
ns
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