ST3414A Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST3414A Datasheet PDF : 6 Pages
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ST3414A
N Channel Enhancement Mode MOSFET
3.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol Typical
Drain-Source Voltage
VDSS
20
Gate-Source Voltage
VGSS
±12
Continuous Drain CurrentTJ=150℃)
TA=25℃
TA=70℃
ID
3.0
2.2
Pulsed Drain Current
IDM
30
Continuous Source Current (Diode Conduction)
IS
1.2
Power Dissipation
TA=25℃
TA=70℃
PD
1.25
0.8
Operation Junction Temperature
TJ
-55/150
Storgae Temperature Range
Thermal Resistance-Junction to Ambient
TSTG
RθJA
-55/150
125
Unit
V
V
A
A
A
W
℃
℃
℃/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST3414A 2012. V1
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