ST3414A Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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производитель

ST3414A

N Channel Enhancement Mode MOSFET

STANSON TECHNOLOGY 

ST3414A

N Channel Enhancement Mode MOSFET

3.0A

DESCRIPTION

ST3414A is the N-Channel logic enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology.This high density process

is especially tailored to minimize on-state resistance.These devices are particularly

suited for low voltage application such as cellular phone and notebook computer

power management, other battery powered circuits, and low in-line power loss are

required. The product is in a very small outline surface mount package.

PIN CONFIGURATION

SOT-23

3

D

G

S

1

2

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23

FEATURE

20V/4.2A, RDS(ON) = 45mΩ ( Typ.)

@VGS = 4.5V

20V/3.4A, RDS(ON) = 60 mΩ

@VGS = 2.5V

20V/2.8A, RDS(ON) = 80 mΩ

@VGS = 1.8V

Super high density cell design for extremely

low RDS(ON)

Exceptional on-resistance and maximum DC

current capability

SOT-23package design

3

14YA

1

2

Y: Year Code A: Week Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST3414A 2012. V1

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