ST3401SRG Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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производитель

ST3401SRG

P Channel Enhancement Mode MOSFET

STANSON TECHNOLOGY 

ST3401SRG

P Channel Enhancement Mode MOSFET

-4.0A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Static

Drain-Source Breakdown

Voltage

Gate Threshold Voltage

Gate Leakage Current

Zero Gate Voltage Drain

Current

Drain-source On-Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Turn-On Time

Turn-Off Time

Symbol

Condition

Min Typ Max Unit

V(BR)DSS

VGS(th)

IGSS

IDSS

RDS(on)

gfs

VSD

VGS=0V,ID=-250uA -30

VDS=VGS,ID=-250uA -0.4

-1.0

VDS=0V,VGS=±12V

VDS=-24V,VGS=0V

VDS=-24V,VGS=0V

TJ=55℃

VGS=-10V,ID=-4.0A

VGS=-4.5V,ID=-3.2A

VGS=-2.5V,ID=-1.2A

VDS=-5V,ID=-4.0V

±100

-1

-10

55 61

62 70

90 98

10

IS=-1.0A,VGS=0V

-1.2

V

V

nA

uA

mΩ

S

V

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS=-15V

VGS=-10V

ID≡-4.0A

VDS=-15V

VGS=0V

F=1MHz

VDS=-15V

VGS=-15V

ID=-1A

RL=6Ω

RG=-10Ω

14 21

1.9

nC

3.7

540

131

pF

105

10 15

15 25

nS

31 50

20 30

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STP3401SRG 2009. V1

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