ST2341SRG Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST2341SRG Datasheet PDF : 7 Pages
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ST2341SRG
P Channel Enhancement Mode MOSFET
-3.2A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Symbol
V(BR)DSS
VGS(th)
IGSS
Zero Gate Voltage Drain
Current
IDSS
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Time
Turn-Off Time
RDS(on)
gfs
VSD
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Condition
Min Typ Max Unit
VGS=0V,ID=-250uA
-20
V
VDS=VGS,ID=-250uA
VDS=0V,VGS=±12V
VDS=-20V,VGS=0V
VDS=-20V,VGS=0V
TJ=55℃
VGS=-2.5V,ID=-2.0A
VGS=-4.5V,ID=-3.2A
VDS=-5V,ID=-2.8V
-0.35
-1.0 V
±100 nA
-1
-10 uA
0.045 0.05 Ω
0.053 0.06
6.5
S
IS=-1.6A,VGS=0V
-0.7 -1.0 V
VDS=-6V
VGS=-4.5V
ID≡-2.8A
VDS=-6V
VGS=0V
F=1MHz
VDD=-6V
RL=6Ω
ID=-1A
VGEN=-4.5V
RG=6Ω
5.8 10
0.85
nC
1.7
415
223
pF
87
13 25
36
60 nS
42 70
34 60
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2341SRG 2014. V1
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