ST2304SRG Просмотр технического описания (PDF) - STANSON TECHNOLOGY
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ST2304SRG Datasheet PDF : 6 Pages
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ST2304SRG
N Channel Enhancement Mode MOSFET
3.2A
DESCRIPTION
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
FEATURE
30V/3.2A, RDS(ON) = 44m-ohm (Typ.)
@VGS = 10.0V
30V/2.0A, RDS(ON) = 60m-ohm
@VGS = 4.5V
30V/1.5A, RDS(ON) =90 m-ohm
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3
04YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2304SRG
SOT-23
04YA
※ Process Code : A ~ Z ; a ~ z
※ ST2304SRG S : SOT-23 ; R : Tape Reel ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
ST2304SRG 2005. V1
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