ST2303SRG Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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ST2303SRG

P Channel Enhancement Mode MOSFET

STANSON TECHNOLOGY 

ST2303SRG

P Channel Enhancement Mode MOSFET

-2.6A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

Gate Threshold Voltage

Gate Leakage Current

Zero Gate Voltage Drain

Current

Drain-source On-Resistance

Forward Transconductance

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Turn-On Time

Turn-Off Time

V(BR)DSS

VGS=0V,ID=-10uA

-30

V

VGS(th) VDS=VGS,ID=-250uA -1.0

-3.0 V

IGSS

IDSS

RDS(on)

gfs

VDS=0V,VGS=±20V

VDS=-30V,VGS=0V

VDS=-30V,VGS=0V

TJ=55℃

VGS=-10V,ID=-2.6A

VGS=-4.5V,ID=-2.0A

VDS=-10V,ID=-1.7V

±100 nA

-1

-10 uA

0.095

Ω

0.125

2.4

S

VSD

IS=-1.25A,VGS=0V

-0.8 -1.2 V

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VDS=-15V

VGS=-10V

ID≡-1.7A

VDS=-15V

VGS=0V

F=1MHz

VDD=-15V

RL=15Ω

ID=-1.0A

VGEN=-10V

RG=6Ω

5.8 10

0.8

nC

1.5

226

87

pF

19

9 20

9 20

nS

18 35

6 20

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST2303SRG 2005. Rev.1

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