VN2406L Просмотр технического описания (PDF) - New Jersey Semiconductor
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VN2406L Datasheet PDF : 2 Pages
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Thermal Characteristics
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
3c
<*•
"DR*
'DRM
@ Tc = 25°C
°c/w
°c/w
TO-92
0.9A
5.0A
LOW
125
170
0.1 8A
1.7A
, (continuous) is limited by max rated T..
Electrical Characteristics (@ 25 C unless otherwise specified)
Symbol
BVDSS
Parameter
Drain-to-Source
Breakdown Voltage
Min Typ Max
Unit
240
V
Conditions
VGS = OV, ID = 0.1mA
^GS(th)
'GSS
IDSS
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
0.8
2
V
100
nA
10
500
HA
'o(ON)
ON-State Drain Current
1.0
^DS(ON)
Static Drain-to-Source
All
10
ON-State Resistance
VN2410
10
VN2406
6
Af^DSfON) Change in RDS<ON) with Temperature
1.0
1.4
GFS
Forward Transconductance
300
GISS
Input Capacitance
125
CQSS
Common Source Output Capacitance
50
C-RSS
Reverse Transfer Capacitance
20
*d(ON)
Turn-ON Delay Time
8
tr
Rise Time
8
ld(OFF)
Turn-OFF Delay Time
23
t,
Fall Time
24
VSD
Diode Forward Voltage Drop VN2410
1.2
VN2406
1.2
Notes:
1 . All D.C. parameters 100%tested at 25°C unless otherwise stated. (Pu se test: 300|is pulse, 2% duty cycle.)
2. All A.C. parameters sampl 3 tested.
A
Q
%/°C
me?
pF
ns
V
V
VGS = VDS, ! D = 1 m A
VGS = 20V, VDS = 0V
VGS = OV,VDS=120V
VGS = OV,VDS = 120V
TA = 125°C
VGS = -10V,VDS = 15V
VGS = 2.5V, ID = 0.1 A
VGS = 10V, ID = 0.5A
VGS = 10V, ID = 0.5A
VGS=10V, ID = 0.55A
VDS = 10V, ID = 0.5A
VGS = 0V, VDS = 25V
f 1 MM?
VDD = 60V
I C\A
RGEN = 25Q
VGS = OV, ISD = 0.19A
VGS = 0V, ISD = 0.8A
Switching Waveforms and Test Circuit
10V
INPUT
/
^
f 90%
VDD
OUTPUT
*{QN)
td(ON}
V
1 Tr
10%-V
\V
'(OFF)
'd(OFF)
tF
ho%
90% ^
—. -90°
PULSE
GENERATOR
"gen
A AA
© T INPUT
-I
v°o
< RL
f>
>
> OUTPUT
/^ | 1 -
/ i 4-
D.U.T.
^_^ |_
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