UPD5702 Просмотр технического описания (PDF) - NEC => Renesas Technology

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Компоненты Описание

производитель

UPD5702

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS

NEC => Renesas Technology 

ADJACENT CHANNEL POWER

(f = 1.9 GHz, VDS = 3 V, Pin = −5 dBm, TA = +25°C, unless otherwise specified)

ATTEN 20 dB

RL 5.0 dBm

10 dB/

MKR –71.17 dB

600 kHz

D

µPD5702TU

Center 1.900 GHz

RBW 1.0 kHz

VBW 3.0 kHz

Span 2.000 MHz

SWP 10.0 s

Remark The graphs indicate nominal characteristics.

6

Preliminary Data Sheet PU10455EJ01V0DS

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